Jeon, Kun-Rok Min, Byoung-Chul Park, Youn-Ho Lee, Hun-Sung Park, Chang-Yup Jo, Young-Hun Shin, Sung-Chul 2024-01-20T16:04:25Z 2024-01-20T16:04:25Z 2021-09-05 2011-10 0003-6951 https://pubs.kist.re.kr/handle/201004/129930 We have investigated the temperature and bias dependence of the Hanle effect in a composite n-type Ge system consisting of a heavily doped surface layer and a moderately doped Ge substrate, using three-terminal Hanle measurements. A large spin signal of similar to 5.1 k Omega mu m(2) and a spin lifetime of similar to 105 ps are obtained at 300 K. The spin signal, spin lifetime, and their asymmetries with respect to the bias polarity have been measured over a temperature range from 5 K to 300 K. Intriguingly, an inverted Hanle effect, indicating the sign inversion of spin polarization in Ge, is observed at low temperature. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3648107] English AMER INST PHYSICS Temperature and bias dependence of Hanle effect in CoFe/MgO/composite Ge Article 10.1063/1.3648107 1 APPLIED PHYSICS LETTERS, v.99, no.16 APPLIED PHYSICS LETTERS 99 16 scie scopus 000296517600039 2-s2.0-80155187599 Physics, Applied Physics Article SPIN-INJECTION TRANSPORT SILICON cobalt alloys composite materials contact resistance elemental semiconductors germanium Hanle effect heavily doped semiconductors iron alloys magnesium compounds spin polarised transport