Jeon, Kun-Rok Min, Byoung-Chul Jo, Young-Hun Lee, Hun-Sung Shin, Il-Jae Park, Chang-Yup Park, Seung-Young Shin, Sung-Chul 2024-01-20T16:04:28Z 2024-01-20T16:04:28Z 2021-09-05 2011-10 2469-9950 https://pubs.kist.re.kr/handle/201004/129933 We report the all-electrical spin injection and detection in CoFe/MgO/moderately doped n-Gecontact at room temperature (RT), employing three-terminal Hanle measurements. A sizable spin signal of similar to 170 k Omega mu m(2) has been observed at RT, and the analysis using a single-step tunneling model gives a spin lifetime of similar to 120 ps and a spin diffusion length of similar to 683 nm in Ge. The observed spin signal shows asymmetric bias and temperature dependences which are strongly related to the asymmetry of the tunneling process. English AMER PHYSICAL SOC Electrical spin injection and accumulation in CoFe/MgO/Ge contacts at room temperature Article 10.1103/PhysRevB.84.165315 1 Physical Review B, v.84, no.16 Physical Review B 84 16 scie scopus 000298991800005 2-s2.0-80155186255 Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Materials Science Physics Article METAL/TUNNEL BARRIER CONTACT SILICON SEMICONDUCTOR SPINTRONICS TRANSPORT METALS