Song, Hooyoung Kim, Eun Kyu Han, Il Ki Lee, Sung-Ho Hwang, Sung-Min 2024-01-20T16:04:41Z 2024-01-20T16:04:41Z 2021-09-05 2011-10 1533-4880 https://pubs.kist.re.kr/handle/201004/129944 We fabricated yellow (575 nm) emitting a-plane InGaN/GaN light emitting diode (LED). Microstructure and stress relaxation of the InGaN well layer were observed from the images of dark field transmission electron microscopy. The LED chip was operated at 3.7 V, 20 mA, and the polarization-free characteristic in nonpolar InGaN layer was confirmed from a small blue-shift of similar to 1.7 nm with increase of current density. The high photoluminescence (PL) efficiency of 30.4% showed that this non-polar InGaN layer has a potential of application to green-red long wavelength light emitters. The PL polarization ratio at 290 K was 0.25 and the energy difference between two subbands was estimated to be 40.2 meV. The low values of polarization and energy difference were due to the stress relaxation of InGaN well layer. English AMER SCIENTIFIC PUBLISHERS EMITTING-DIODES GAN EXCITONS Linearly Polarized Light Emission from InGaN/GaN Quantum Well Structure with High Indium Composition Article 10.1166/jnn.2011.4316 1 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.11, no.10, pp.9222 - 9226 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 11 10 9222 9226 scie scopus 000298363900123 2-s2.0-84863174883 Chemistry, Multidisciplinary Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Chemistry Science & Technology - Other Topics Materials Science Physics Article; Proceedings Paper EMITTING-DIODES GAN EXCITONS InGaN/GaN Quantum Wells Nonpolar (11-20) Plane High Indium Compositions Optical Polarization