Kim, H-S. Park, J-K. Lee, W-S. Baik, Y-J. 2024-01-20T16:30:36Z 2024-01-20T16:30:36Z 2021-09-04 2011-09-01 0040-6090 https://pubs.kist.re.kr/handle/201004/129997 The effect of hydrogen on compressive residual stress of cubic boron nitride (cBN) was investigated. The deposition was performed by unbalanced magnetron sputtering of a hexagonal boron nitride (hBN) target connected to radio-frequency electric power of 400W. Up to 2 sccm of hydrogen was added to a gas mixture of argon and nitrogen flowing at 9 and 1 sccm, respectively. The compressive stress rapidly decreased from 10.5 GPa to 3 GPa, with increasing hydrogen flow up to 1.0 sccm. The cBN fraction in these films, however, remained over 60%, with only a trivial decrease with increasing hydrogen. This reduction was discussed in terms of the relation between the penetration probabilities of hydrogen and argon ions into the film, which was main origin of compressive residual stress of the hBN layer. (C) 2011 Published by Elsevier B.V. English ELSEVIER SCIENCE SA THIN-FILMS VAPOR-DEPOSITION CONSTITUTION DIAMOND GROWTH Variation of residual stress in cubic boron nitride film caused by hydrogen addition during unbalanced magnetron sputtering Article 10.1016/j.tsf.2011.06.092 1 THIN SOLID FILMS, v.519, no.22, pp.7871 - 7874 THIN SOLID FILMS 519 22 7871 7874 scie scopus 000295057000043 2-s2.0-80052105245 Materials Science, Multidisciplinary Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Materials Science Physics Article THIN-FILMS VAPOR-DEPOSITION CONSTITUTION DIAMOND GROWTH Cubic boron nitride Compressive residual stress Hydrogen addition Ar incorporation