Choi, Chi Kyu Kim, Chang Young Navamathavan, R. Lee, Heang Seuk Woo, Jong-Kwan Hyun, Myung Taek Lee, Heon Ju Jeung, Won Young 2024-01-20T16:30:58Z 2024-01-20T16:30:58Z 2021-09-05 2011-09 1567-1739 https://pubs.kist.re.kr/handle/201004/130015 Low-dielectric-constant SiOC(-H) thin films were deposited on p-type Si(100) substrates using plasma enhanced chemical vapor deposition (PECVD) from vinyltrimethylsilane (VTMS; CH2 = CHSi(CH3)(3)) and oxygen gas as precursors. To improve the structural, mechanical and electrical characteristics, SiOC(-H) films deposited using PECVD were post-treated by ultraviolet (UV) irradiation for various time intervals. Carbon content of the SiOC(-H) films increased before 240 s of UV irradiation time. But carbon-bonded functional groups of the SiOC(-H) film, in case of 480 s UV irradiation time, is replaced with Si-O bond. Because the Si-CHn bond groups are broken due to UV irradiation, Therefore, the films are formed with Si-O bond rich in the Si-O-C(-H) structure. The lowest relative dielectric constant, leakage current density, the elastic modulus and the hardness of SiOC(-H) with 240 s of UV irradiation time were about 2.07, 2.1 x 10(-7)A/cm(2), 43 GPa, and 3.68 GPa, respectively. The results indicate that the SiOC(-H) films exposed by UV irradiation improve the structural, mechanical, and electrical characteristics. (C) 2011 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE BV CHEMICAL-VAPOR-DEPOSITION LOW-DIELECTRIC-CONSTANT PECVD UV irradiation effects on the bonding structure and electrical properties of ultra low-k SiOC(-H) thin films for 45 nm technology node Article 10.1016/j.cap.2011.05.004 1 CURRENT APPLIED PHYSICS, v.11, no.5, pp.S109 - S113 CURRENT APPLIED PHYSICS 11 5 S109 S113 scie scopus kci 000296969800024 2-s2.0-81155134160 Materials Science, Multidisciplinary Physics, Applied Materials Science Physics Article; Proceedings Paper CHEMICAL-VAPOR-DEPOSITION LOW-DIELECTRIC-CONSTANT PECVD Low-k materials SiOC(-H) film PECVD UV irradiation FT-IR