Lim, J. Y. Song, J. D. Choi, W. J. Ahn, J. P. Yang, H. S. 2024-01-20T16:31:27Z 2024-01-20T16:31:27Z 2021-09-05 2011-09 1862-6300 https://pubs.kist.re.kr/handle/201004/130039 In this study, we have attempted a growth of InSb film on the cost-effective, (001)-Si substrate inserting a thin intermediate-layer of In As quantum dots (QDs) at the InSb/Si interface. Analysis of the interface region using transmission electron microscopy reveals that, during the subsequent InSb-growth process, InAs QDs have disappeared leaving instead a thin interlayer of InAs. The resulting 2.8-mu m-thick InSb film on (001) Si is found to have an electron mobility of 40 907 cm(2)/Vs at 300K, which turned out to be the highest value for InSb with comparable thickness grown on Si substrate. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim English WILEY-BLACKWELL MOLECULAR-BEAM EPITAXY HETEROEPITAXIAL GROWTH 2-STEP GROWTH BUFFER LAYERS THIN-FILMS SILICON Growth of high-quality InSb layer on (001) Si substrate with an initial intermediate-layer of InAs quantum dots Article 10.1002/pssa.201026714 1 PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.208, no.9, pp.2104 - 2107 PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 208 9 2104 2107 scie scopus 000295433600018 2-s2.0-80052495562 Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Materials Science Physics Article MOLECULAR-BEAM EPITAXY HETEROEPITAXIAL GROWTH 2-STEP GROWTH BUFFER LAYERS THIN-FILMS SILICON InSb InAs quantum dots silicon