Jeong, Doo Seok Cheong, Byung-ki Kohlstedt, Hermann 2024-01-20T16:31:34Z 2024-01-20T16:31:34Z 2021-09-04 2011-09 0038-1101 https://pubs.kist.re.kr/handle/201004/130046 We investigated electroforming-free bipolar resistive switching behavior in Pt/Ti/Al2O3/Al tunnel junctions where the Al2O3 tunnel barrier was naturally formed on Al in air. Various compliance current values for the junction's set switching successfully lead to various resistance values in its low resistance state, suggesting the possibility for multi-level-operation. A mechanism for the bipolar switching is qualitatively discussed in terms of the modulation of the tunnel barrier by the reactive Ti layer on top of the barrier. (C) 2011 Elsevier Ltd. All rights reserved. English PERGAMON-ELSEVIER SCIENCE LTD OXIDE ALUMINUM MEMORY Pt/Ti/Al2O3/Al tunnel junctions exhibiting electroforming-free bipolar resistive switching behavior Article 10.1016/j.sse.2011.05.028 1 SOLID-STATE ELECTRONICS, v.63, no.1, pp.1 - 4 SOLID-STATE ELECTRONICS 63 1 1 4 scie scopus 000295066400001 2-s2.0-80051788956 Engineering, Electrical & Electronic Physics, Applied Physics, Condensed Matter Engineering Physics Article OXIDE ALUMINUM MEMORY Memory device Resistive switching RRAM