Yang, Changjae Lee, Sangsoo Shin, Keun Wook Oh, Sewoung Park, Jinsub Kim, Chang-Zoo Park, Won-Kyu Ha, Seung-Kyu Choi, Won Jun Yoon, Euijoon 2024-01-20T16:31:59Z 2024-01-20T16:31:59Z 2021-09-05 2011-08-29 0003-6951 https://pubs.kist.re.kr/handle/201004/130065 Optical properties of Si-doped GaInP grown on Ge-on-Si substrates were investigated using photoluminescence (PL). Similar to spontaneously ordered GaInP, two peaks were observed around 1.74 and 1.85 eV at 19 K; however, no satellite peaks were observed in the selected-area diffraction pattern. Based on temperature-dependent PL, the peak at 1.74 eV was attributed to the donor-acceptor pair transition caused by the amphoteric characteristics of Si and/or Ge from the dopant and/or substrate. In addition, the S-shape in the temperature dependence of the 1.85 eV peak was attributed to the interaction of the donor levels with the conduction band of GaInP. (C) 2011 American Institute of Physics. [doi:10.1063/1.3623757] English AMER INST PHYSICS SOLAR-CELLS TEMPERATURE-DEPENDENCE AMPHOTERIC BEHAVIOR DOPANTS EPITAXY LAYERS Growth of Si-doped GaInP on Ge-on-Si substrates and its photoluminescence characteristics Article 10.1063/1.3623757 1 APPLIED PHYSICS LETTERS, v.99, no.9 APPLIED PHYSICS LETTERS 99 9 scie scopus 000294489300019 2-s2.0-80052538248 Physics, Applied Physics Article SOLAR-CELLS TEMPERATURE-DEPENDENCE AMPHOTERIC BEHAVIOR DOPANTS EPITAXY LAYERS III-V on Si solar cell photoluminescence