Cho, Byungjin Song, Sunghun Ji, Yongsung Kim, Tae-Wook Lee, Takhee 2024-01-20T16:32:15Z 2024-01-20T16:32:15Z 2021-09-05 2011-08-09 1616-301X https://pubs.kist.re.kr/handle/201004/130077 In recent years, organic resistive memory devices in which active organic materials possess at least two stable resistance states have been extensively investigated for their promising memory potential. From the perspective of device fabrication, their advantages include simple device structures, low fabrication costs, and printability. Furthermore, their exceptional electrical performances such as a nondestructive reading process, nonvolatility, a high ON/OFF ratio, and a fast switching speed meet the requirements for viable memory technologies. Full understanding of the underlying physics behind the interesting phenomena is still challenging. However, many studies have provided useful insights into scientific and technical issues surrounding organic resistive memory. This Feature Article begins with a summary on general characteristics of the materials, device structures, and switching mechanisms used in organic resistive devices. Strategies for performance enhancement, integration, and advanced architectures in these devices are also presented, which may open a way toward practically applicable organic memory devices. English WILEY-V C H VERLAG GMBH NEGATIVE-DIFFERENTIAL-RESISTANCE NONVOLATILE MEMORY THIN-FILM ELECTRICAL BISTABILITY BISTABLE MEMORY MULTILEVEL CONDUCTANCE DATA-STORAGE POLYMER MECHANISM DIODE Organic Resistive Memory Devices: Performance Enhancement, Integration, and Advanced Architectures Article 10.1002/adfm.201100686 1 ADVANCED FUNCTIONAL MATERIALS, v.21, no.15, pp.2806 - 2829 ADVANCED FUNCTIONAL MATERIALS 21 15 2806 2829 scie scopus 000294164900001 2-s2.0-80051693082 Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Chemistry Science & Technology - Other Topics Materials Science Physics Article NEGATIVE-DIFFERENTIAL-RESISTANCE NONVOLATILE MEMORY THIN-FILM ELECTRICAL BISTABILITY BISTABLE MEMORY MULTILEVEL CONDUCTANCE DATA-STORAGE POLYMER MECHANISM DIODE architectures electrical bistability integration organic electronics performance enhancement resistive memory switching mechanisms