Chong, Eugene Chun, Yoon Soo Kim, Seung Han Lee, Sang Yeol 2024-01-20T16:32:26Z 2024-01-20T16:32:26Z 2021-09-05 2011-08-01 0040-6090 https://pubs.kist.re.kr/handle/201004/130087 We report on the fabrication and performance of amorphous oxide thin film transistors with indium zinc oxide (In2O3:ZnO = 1:1 mol%) and various ratios of hafnium-doped indium zinc oxide (IZO:HfO2 = 2:0, 0.3, 0.7, and 1.1 mol%) deposited at the same deposition conditions for semiconductor channel layer. The carrier concentration (N-cp) of the HIZO films was further decreased from 7.08 x 10(17) to 5.0 x 10(16) cm(-3). This indicates that Hf metal cations effectively suppress carrier generation due to the high electron negativity (1.3) of Hf. In addition, we compared bias instability of both devices after bias temperature stress (US) test under on-current state at V-DS of 10 V and I-DS of 3 mu A at 60 degrees C for 420 min. It was found that the Hf metal cations could be effectively incorporated in the IZO thin films as a suppressor against both the oxygen deficiencies and the carrier generation in the ZnO-based system. (C) 2011 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE SA Improvement of bias stability of indium zinc oxide thin film transistors by the incorporation of hafnium fabricated by radio-frequency magnetron sputtering Article 10.1016/j.tsf.2011.04.044 1 THIN SOLID FILMS, v.519, no.20, pp.6881 - 6883 THIN SOLID FILMS 519 20 6881 6883 scie scopus 000294790900053 2-s2.0-80051550261 Materials Science, Multidisciplinary Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Materials Science Physics Article; Proceedings Paper IZO HIZO Carrier concentration Stability