Kim, Chang Young Navamathavan, R. Lee, Heang Seuk Woo, Jong-Kwan Hyun, Myung Taek Lee, Kwang-Man Jeung, Won Young Choi, Chi Kyu 2024-01-20T16:32:28Z 2024-01-20T16:32:28Z 2021-09-05 2011-08-01 0040-6090 https://pubs.kist.re.kr/handle/201004/130089 Low-dielectric constant SiOC(-H) films were deposited on p-type Si(100) substrates by plasma-enhanced chemical-vapor deposition (PECVD) using dimethyldimethoxy silane (DMDMS, C4H12O2Si) and oxygen gas as precursors. To improve the physicochemical properties of the SiOC(-H) films, the deposited SiOC(- H) films were exposed to ultraviolet (UV) irradiation in a vacuum. The bonding structure of the SiOC(-H) films was investigated by Fourier transform infrared (FTIR) spectroscopy and X-ray photoelectron spectroscopy (XPS). The electrical characterization of SiOC(- H) films were carried out through I-V measurements using the comb-like patterns of the TiN/Al/Ti/SiOC(H)/TiN/Al/Ti metal-insulator-metal (MIM) structure. Excessive UV treatment adversely affected the SiOC(-H) film, which resulted in an increased dielectric constant. Our results provide insight into the UV irradiation of low-k SiOC(-H) films. (C) 2011 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE SA CHEMICAL-VAPOR-DEPOSITION ULTRALOW-K DIELECTRICS THIN-FILMS PECVD INTERCONNECTS Ultraviolet irradiation effect on the properties of leakage current and dielectric breakdown of low-dielectric-constant SiOC(-H) films using comb capacitor structure Article 10.1016/j.tsf.2011.04.058 1 THIN SOLID FILMS, v.519, no.20, pp.6732 - 6736 THIN SOLID FILMS 519 20 6732 6736 scie scopus 000294790900021 2-s2.0-80051551732 Materials Science, Multidisciplinary Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Materials Science Physics Article; Proceedings Paper CHEMICAL-VAPOR-DEPOSITION ULTRALOW-K DIELECTRICS THIN-FILMS PECVD INTERCONNECTS Low-k materials SiOC(-H) film PECVD UV irradiation FTIR