Park, Ji Hun Byun, Dongjin Lee, Joong Kee 2024-01-20T16:33:21Z 2024-01-20T16:33:21Z 2021-09-05 2011-08 1533-4880 https://pubs.kist.re.kr/handle/201004/130134 Gallium tin oxide composite (GTO) thin films were prepared by electron cyclotron resonance-metal organic chemical vapor deposition (ECR-MOCVD). The organometallics of tetramethlytin and trimethylgallium were used for precursors of gallium and tin, respectively. X-ray diffraction (XRD) characterization indicated that the gallium tin oxide composite thin films show the nano-polycrystalline of tetragonal rutile structure. Hall measurement indicated that the Ga/[O+Sn] mole ratio play an important role to determine the electrical properties of gallium tin composite oxide thin films. n-type conducting film obtained Ga/[O+Sn] mole ratio of 0.05 exhibited the lowest electrical resistivity of 1.21 x 10(-3) Omega.cm. In our experimental range, the optimized carrier concentration of 3.71 x 10(18) cm(-3) was prepared at the Ga/[O+Sn] mole ratio of 0.35. English AMER SCIENTIFIC PUBLISHERS CONDUCTION Structural and Electrical Characteristics of Gallium Tin Oxide Thin Films Prepared by Electron Cyclotron Resonance-Metal Organic Chemical Vapor Deposition Article 10.1166/jnn.2011.4840 1 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.11, no.8, pp.7234 - 7237 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 11 8 7234 7237 scie scopus 000295296400104 2-s2.0-84863034422 Chemistry, Multidisciplinary Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Chemistry Science & Technology - Other Topics Materials Science Physics Article; Proceedings Paper CONDUCTION ECR-MOCVD Gallium Tin Oxide Structural and Electrical Properties Texture Coefficient