Yang, Min Kyu Park, Jae-Wan Lee, Jeon-Kook 2024-01-20T16:33:32Z 2024-01-20T16:33:32Z 2021-09-04 2011-08 1598-9623 https://pubs.kist.re.kr/handle/201004/130144 Heteroepitaxial Cr-doped SrZrO3 thin films were grown on 200 nm-thick SrRuO3 films deposited on SrTiO3 (100) substrates by pulsed laser deposition. The Cr-doped SrZrO3 films on the SrRuO3 bottom electrode exhibited an XRD peak for the (hh0/00l) planes of SrZrO3 and SrRuO3 thin films, showing a good epitaxial relationship. The I-V characteristics of the Au/Cr-doped SrZrO3/SrRuO3 MIM structures revealed resistance switching behavior with an ON/OFF resistance ratio of 20. English KOREAN INST METALS MATERIALS NONVOLATILE MEMORY Resistance switching of heteroepitaxial Cr-doped SrZrO3 thin films Article 10.1007/s12540-011-0818-4 1 METALS AND MATERIALS INTERNATIONAL, v.17, no.4, pp.637 - 640 METALS AND MATERIALS INTERNATIONAL 17 4 637 640 scie scopus kci ART001609193 000294958900018 2-s2.0-80053182163 Materials Science, Multidisciplinary Metallurgy & Metallurgical Engineering Materials Science Metallurgy & Metallurgical Engineering Article NONVOLATILE MEMORY electrical/electronic materials deposition defects epitaxy atomic force microscopy (AFM) SrZrO3