Kang, Gil Bum Kwon, Soon-Mook Kim, Young Hwan Kim, Yong Tae Sohn, Young-Soo 2024-01-20T16:33:37Z 2024-01-20T16:33:37Z 2021-09-04 2011-08 1555-130X https://pubs.kist.re.kr/handle/201004/130148 A field effect transistor (FET) biosensor with a trimmed silicon nanowire (SiNW) structure was designed, fabricated, and characterized for the selective and real-time detection of the prostate-specific antigen (PSA), a biomarker for diagnosing prostate cancer. The SiNW FET was fabricated using only top-down CMOS process techniques, including photoresist trimming. To detect PSA, the SiNW surface was modified with an antibody of PSA (anti-PSA). The sensing of PSA then occured via real-time conductance changes of the SiNW. The output response of the SiNW FET biosensor was linearly related to the PSA concentration within a range of 50 pg/ml and 500 pg/ml. When investigating the selectivity, the SiNW modified to detect PSA did not respond to the C-reactive protein (CRP). Thus, the results demonstrated the feasibility of the proposed biosensor for diagnosing prostate cancer. English AMER SCIENTIFIC PUBLISHERS SENSOR IMMUNOASSAY BIOSENSOR Sensing of Prostate-Specific Antigen Using Trimmed Silicon Nanowire Field Effect Transistors Article 10.1166/jno.2011.1179 1 JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, v.6, no.3, pp.330 - 333 JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS 6 3 330 333 scie scopus 000299583000025 2-s2.0-84863136509 Engineering, Electrical & Electronic Nanoscience & Nanotechnology Physics, Applied Engineering Science & Technology - Other Topics Physics Article; Proceedings Paper SENSOR IMMUNOASSAY BIOSENSOR Field Effect Transistor Silicon Nanowire Prostate-Specific Antigen Top-Down CMOS Process