Park, Tae-Eon Lee, Ki-Young Kim, Ilsoo Chang, Joonyeon Voorhees, Peter Choi, Heon-Jin 2024-01-20T16:34:04Z 2024-01-20T16:34:04Z 2021-09-05 2011-07-27 1931-7573 https://pubs.kist.re.kr/handle/201004/130169 Silicon nanoribbons (Si NRs) with a thickness of about 30 nm and a width up to a few micrometers were synthesized. Systematic observations indicate that Si NRs evolve via the following sequences: the growth of basal nanowires assisted with a Pt catalyst by a vapor-liquid-solid (VLS) mechanism, followed by the formation of sawlike edges on the basal nanowires and the planar filling of those edges by a vapor-solid (VS) mechanism. Si NRs have twins along the longitudinal < 110 > growth of the basal nanowires that also extend in < 112 > direction to edge of NRs. These twins appear to drive the lateral growth by a reentrant twin mechanism. These twins also create a mirror-like crystallographic configuration in the anisotropic surface energy state and appear to further drive lateral saw-like edge growth in the < 112 > direction. These outcomes indicate that the Si NRs are grown by a combination of the two mechanisms of a Pt-catalyst-assisted VLS mechanism for longitudinal growth and a twin-assisted VS mechanism for lateral growth. English SPRINGER SILICON NANOWIRES NANOBELTS NANOCRYSTALS MECHANISM DIRECTION RIBBONS Combinatorial growth of Si nanoribbons Article 10.1186/1556-276X-6-476 1 NANOSCALE RESEARCH LETTERS, v.6 NANOSCALE RESEARCH LETTERS 6 scie scopus 000296252400004 2-s2.0-84862956340 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Science & Technology - Other Topics Materials Science Physics Article SILICON NANOWIRES NANOBELTS NANOCRYSTALS MECHANISM DIRECTION RIBBONS