Lee, Jung Min Jeong, Hae Yong Choi, Kyoung Jin Park, Won Il 2024-01-20T16:34:07Z 2024-01-20T16:34:07Z 2021-09-05 2011-07-25 0003-6951 https://pubs.kist.re.kr/handle/201004/130171 We demonstrate the use of graphene based transparent sheets as a p-type current spreading layer in GaN light emitting diodes (LEDs). Very thin Ni/Au was inserted between graphene and p-type GaN to reduce contact resistance, which reduced contact resistance from similar to 5.5 to similar to 0.6 Omega/ cm(2), with no critical optical loss. As a result, LEDs with metal-graphene provided current spreading and injection into the p-type GaN layer, enabling three times enhanced electroluminescent intensity compared with those with graphene alone. We confirmed very strong blue light emission in a large area of the metal-graphene layer by analyzing image brightness. (C) 2011 American Institute of Physics. [doi:10.1063/1.3595941] English AMER INST PHYSICS CONTACT NI/AU Metal/graphene sheets as p-type transparent conducting electrodes in GaN light emitting diodes Article 10.1063/1.3595941 1 APPLIED PHYSICS LETTERS, v.99, no.4 APPLIED PHYSICS LETTERS 99 4 scie scopus 000293475500015 2-s2.0-79961097975 Physics, Applied Physics Article CONTACT NI/AU