Son, Dong Ick Shim, Jae Ho Park, Dong Hee Jung, Jae Hun Lee, Jung Min Park, Won Il Kim, Tae Whan Choi, Won Kook 2024-01-20T16:34:08Z 2024-01-20T16:34:08Z 2021-09-05 2011-07-22 0957-4484 https://pubs.kist.re.kr/handle/201004/130172 We present data, which were obtained before bending and after bending, for the electrical bistabilities, memory stabilities, and memory mechanisms of three-layer structured flexible bistable organic memory (BOM) devices, which were fabricated utilizing the ultrathin graphite sheets (UGS) sandwiched between insulating poly(methylmethacrylate) (PMMA) polymer layers. The UGS were formed by transferring UGS (about 30 layers) and using a simple spin-coating technique. Transmission electron microscopy (TEM) measurements were performed to investigate the microstructural properties of the PMMA/UGS/PMMA films. Current-voltage (I-V) measurements were carried out to investigate the electrical properties of the BOM devices containing the UGS embedded in the PMMA polymer. Current-time (I-t) and current-cycle measurements under flat and bent conditions were performed to investigate the memory stabilities of the BOM devices. The memory characteristics of the BOM maintained similar device efficiencies after bending and were stable during repeated bendings of the BOM devices. The mechanisms for these characteristics of the fabricated BOM are described on the basis of the I-V results. English IOP PUBLISHING LTD THIN-FILM Polymer-ultrathin graphite sheet-polymer composite structured flexible nonvolatile bistable organic memory devices Article 10.1088/0957-4484/22/29/295203 1 NANOTECHNOLOGY, v.22, no.29 NANOTECHNOLOGY 22 29 scie scopus 000291871200009 2-s2.0-79960387133 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Science & Technology - Other Topics Materials Science Physics Article THIN-FILM ultrathin graphite polymer hybrid composite organic bistable memory space charge limited current