Park, Kyung-Soo Choi, Young-Jin Kang, Jin-Gu Sung, Yun-Mo Park, Jae-Gwan 2024-01-20T16:34:17Z 2024-01-20T16:34:17Z 2021-09-05 2011-07-15 0957-4484 https://pubs.kist.re.kr/handle/201004/130179 High quality single-crystalline indium tin oxide (ITO) nanowires with controlled Sn contents of up to 32.5 at.% were successfully synthesized via a thermal metal co-evaporation method, based on a vapor-liquid-solid growth mode, at a substrate temperature of as low as 540 degrees C. The high solubility of Sn in the nanowires was explained with the existence of Sn2+ ions along with Sn4+ ions: the coexistence of Sn2+ and Sn4+ ions facilitated their high substitutional incorporation into the In2O3 lattice by relaxing structural and electrical disturbances due to the differences in ionic radii and electrical charges between Sn and In3+ ions. It was revealed that, while the lattice parameter of the ITO nanowires had a minimum value at a Sn content of 6.3 at.%, the electrical resistivity had a minimum value of about 10(-3) Omega cm at a Sn content of 14 at.%. These structural and electrical behaviors were explained by variation in the relative and total amounts of the two species, Sn2+ and Sn4+. English IOP PUBLISHING LTD THIN-FILMS X-RAY LOW-TEMPERATURE SOLAR-CELL ITO DEPOSITION GROWTH The effect of the concentration and oxidation state of Sn on the structural and electrical properties of indium tin oxide nanowires Article 10.1088/0957-4484/22/28/285712 1 NANOTECHNOLOGY, v.22, no.28 NANOTECHNOLOGY 22 28 scie scopus 000291468000043 2-s2.0-79959277710 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Science & Technology - Other Topics Materials Science Physics Article THIN-FILMS X-RAY LOW-TEMPERATURE SOLAR-CELL ITO DEPOSITION GROWTH ITO nanowires resistivity solubility XPS