Kim, Y. H. Karazhanov, S. Zh. Kim, W. M. 2024-01-20T16:34:39Z 2024-01-20T16:34:39Z 2021-09-05 2011-07 0370-1972 https://pubs.kist.re.kr/handle/201004/130197 Electrical and optical properties of H doped ZnO films have been studied experimentally for different H concentrations before and after annealing, as well as theoretically by first-principles calculations. It is found that electrical resistivity of the H doped ZnO increases when increasing the substrate temperature in the range 25-300 degrees C. Carrier concentration and mobility measured by Hall method in as-grown samples are larger than those of annealed ones. The short-wavelength edge of the transmission spectrum of annealed ZnO is found to shift toward lower energies compared to as-grown samples. The band gap estimated from the measured transmission spectra of as grown ZnO increases with increasing H concentration, thus demonstrating the Burstein-Moss effect. However, it decreases in samples annealed at 300 degrees C showing suppression of the Burstein-Moss effect. Possible defect models explaining the reason for the suppression are discussed. The results can be explained by formation of H-2 molecules in annealed ZnO. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim English WILEY-V C H VERLAG GMBH OXIDE Influence of hydrogen on electrical and optical properties of ZnO films Article 10.1002/pssb.201046426 1 PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, v.248, no.7, pp.1702 - 1707 PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 248 7 1702 1707 scie scopus 000293033000029 2-s2.0-79959605459 Physics, Condensed Matter Physics Article OXIDE Burstein-Moss effect doping hydrogen ZnO