Lee, Jung-Ah Paek, Kyeong-Kap Lee, Sangyoup Ju, Byeong-Kwon Lee, Yun-Hi Shin, Hyun Joon 2024-01-20T16:34:45Z 2024-01-20T16:34:45Z 2021-09-05 2011-07 0013-4651 https://pubs.kist.re.kr/handle/201004/130202 The electronic transport properties of the thin film transistor (TFT) devices consisting of carboxyl-modified single-walled carbon nanotube (c-SWCNT) network are studied. This work is focused on the analysis of the effect of chemical treatment on the electronic transport properties from these devices. The c-SWCNT thin film transistor (c-SWCNT TFT) devices were fabricated by a directed assembly method based on electrostatic interaction between amino-functionalized substrate and c-SWCNTs. The electrical characteristics of c-SWCNT TFTs were measured at room temperature. From the Raman results and the transport characteristics of c-SWCNT TFT devices, the transport mechanism in these devices can be accounted that the deep levels arising from vacancy-adatom complex induced the changes in the electronic band structure of SWCNTs. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3610343] All rights reserved. English ELECTROCHEMICAL SOC INC FIELD-EFFECT TRANSISTORS RAMAN-SPECTROSCOPY ELECTRICAL-TRANSPORT CHARGE-TRANSFER TRANSPARENT ACID DEVICES SENSORS FABRICATION ADSORPTION Transport Characterization of Chemically-Functionalized Single-Walled Carbon Nanotube Thin Film Transistor Article 10.1149/1.3610343 1 JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.158, no.9, pp.K175 - K182 JOURNAL OF THE ELECTROCHEMICAL SOCIETY 158 9 K175 K182 scie scopus 000293175600073 2-s2.0-79960920721 Electrochemistry Materials Science, Coatings & Films Electrochemistry Materials Science Article FIELD-EFFECT TRANSISTORS RAMAN-SPECTROSCOPY ELECTRICAL-TRANSPORT CHARGE-TRANSFER TRANSPARENT ACID DEVICES SENSORS FABRICATION ADSORPTION carbon nanotube thin film transistor