Chong, Eugene Kim, Seung Han Cho, Eun Ah Jang, Gun-Eik Lee, Sang Yeol 2024-01-20T16:35:10Z 2024-01-20T16:35:10Z 2021-09-05 2011-07 1567-1739 https://pubs.kist.re.kr/handle/201004/130224 The processing parameter dependence of the performance of amorphous silicon-indium-zinc-oxide (a-SIZO) films was systematically investigated for Thin Film Transistors (TFTs). The SIZO thin films were prepared on a SiO2/p-Si substrate using 2 wt% Si-doped IZO (2SIZO) ceramic target through an RF-magnetron sputtering process with various process parameters, such as RF power and oxygen partial pressure. The composition analysis of the target was measured by Induced-Coupled Plasma (ICP) and X-Ray fluorescence (XRF). The electrical performance of 2SIZO films were relatively changed by the processing parameters. The electrical performance of the 2SIZO-TFTs confirmed that mu(FE) decreaseswith an increasing oxygen partial pressure and decreasing RF-power. (C) 2011 Elsevier B. V. All rights reserved. English ELSEVIER The relationship between processing parameters and the performance of novel amorphous silicon-indium-zinc oxide thin film transistors Article 10.1016/j.cap.2011.03.079 1 CURRENT APPLIED PHYSICS, v.11, no.4, pp.S132 - S134 CURRENT APPLIED PHYSICS 11 4 S132 S134 scie scopus kci 000296726300033 2-s2.0-80455173969 Materials Science, Multidisciplinary Physics, Applied Materials Science Physics Article; Proceedings Paper Thin film transistor SiInZnO Process parameter Oxide