Chong, Eugene Chun, Yoon Soo Kim, Seung Han Lee, Sang Yeol 2024-01-20T16:35:17Z 2024-01-20T16:35:17Z 2021-09-04 2011-07 1975-0102 https://pubs.kist.re.kr/handle/201004/130230 Thin-film transistors (TFTs) are fabricated using an amorphous indium gallium zinc oxide (a-IGZO) channel layer by rf-magnetron sputtering. Oxygen partial pressure significantly changed the transfer characteristics of a-IGZO TFTs. Measurements performed on a-IGZO TFT show the change of threshold voltage in the transistor channel layer and electrical properties with varying O-2 ratios. The device performance is significantly affected by adjusting the O-2 ratio. This ratio is closely related with the modulation generation by reducing the localized trapping carriers and defect centers at the interface or in the channel layer. English SPRINGER SINGAPORE PTE LTD ELECTRON-TRANSPORT PROPERTIES ZINC-OXIDE HYDROGEN TEMPERATURE Effect of oxygen on the threshold voltage of a-IGZO TFT Article 10.5370/JEET.2011.6.4.539 1 JOURNAL OF ELECTRICAL ENGINEERING & TECHNOLOGY, v.6, no.4, pp.539 - 542 JOURNAL OF ELECTRICAL ENGINEERING & TECHNOLOGY 6 4 539 542 scie scopus kci ART001567068 000292278600014 2-s2.0-79960817710 Engineering, Electrical & Electronic Engineering Article ELECTRON-TRANSPORT PROPERTIES ZINC-OXIDE HYDROGEN TEMPERATURE a-IGZO Oxide TFT O-2 partial pressure Threshold voltage