Jeon, Kun-Rok Min, Byoung-Chul Shin, Il-Jae Park, Chang-Yup Lee, Hun-Sung Jo, Young-Hun Shin, Sung-Chul 2024-01-20T17:01:28Z 2024-01-20T17:01:28Z 2021-09-05 2011-06 0003-6951 https://pubs.kist.re.kr/handle/201004/130295 We report the electrical spin accumulation with enhanced bias voltage dependence in n-type Si, employing a crystalline CoFe/MgO tunnel contact. A sizable spin signal of similar to 4.8 k Omega mu m(2), a spin lifetime of similar to 155 ps, and a spin diffusion length of similar to 220 nm were obtained at 300 K. The spin signal and lifetime obtained in this system show consistent behavior with the temperature variation irrespective of the bias voltage. Notably, the spin signal exhibits nearly symmetric dependence with respect to the bias polarity, which is ascribed to the improved bias dependence of tunnel spin polarization. (C) 2011 American Institute of Physics. [doi:10.1063/1.3600787] English AMER INST PHYSICS Electrical spin accumulation with improved bias voltage dependence in a crystalline CoFe/MgO/Si system Article 10.1063/1.3600787 1 APPLIED PHYSICS LETTERS, v.98, no.26 APPLIED PHYSICS LETTERS 98 26 scie scopus 000292335700033 2-s2.0-79960098760 Physics, Applied Physics Article SILICON SPINTRONICS