Yang, Min Kyu Park, Jae-Wan Choi, Sun Young Lee, Jeon-Kook 2024-01-20T17:01:32Z 2024-01-20T17:01:32Z 2021-09-05 2011-06 1229-9162 https://pubs.kist.re.kr/handle/201004/130299 Cr-doped SrZrO3 perovskite thin films were deposited on SrRuO3 bottom electrode/SiO2/Si(100) substrates by pulsed laser deposition. The SrZrO3 : Cr perovskite and SrRuO3 bottom electrode showed a well controlled interface, as well as good resistive switching behavior with an ON/OFF ratio > 10(3). Resistive switching memory devices made from Cr-doped SrZrO3 thin films deposited on Si substrates are expected to be more compatible with conventional Si-based electronics. English KOREAN ASSOC CRYSTAL GROWTH, INC MEMORY Deposition of Cr-doped SrZrO3 thin films on Si substrates and their resistance switching characteristics Article 1 JOURNAL OF CERAMIC PROCESSING RESEARCH, v.12, no.3, pp.233 - 235 JOURNAL OF CERAMIC PROCESSING RESEARCH 12 3 233 235 scie scopus kci 000292667100003 2-s2.0-79961000130 Materials Science, Ceramics Materials Science Article MEMORY Resistive switching SrZrO3 Non-volatility memory