Gautam, Sanjeev Thakur, Anup Shukla, D. K. Shin, H. J. Chae, Keun Hwa Singh, K. P. Goyal, Navdeep 2024-01-20T17:01:47Z 2024-01-20T17:01:47Z 2021-09-05 2011-06 0022-3093 https://pubs.kist.re.kr/handle/201004/130311 This paper reports the effect of proton irradiation on the electrical properties of a-As2S3 in the temperature range of 323-418 K and frequency range 0.1-100 kHz. The variation of transport property is studied with proton irradiation dose (1 x 10(13) ions/cm(2) and 1 x 10(15) ions/cm(2)). It has been observed that proton irradiation changes the dc conductivity (sigma(dc)), dc activation energy (Delta E-dc) and ac conductivity (sigma(ac)(omega)). The sigma(dc) and sigma(ac) (w) increases with dose of proton irradiation. The value of frequency exponent (s) decreases with the temperature and irradiation dose. These results are explained in terms of change in density of defect states in these glasses. (C) 2010 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE BV THIN-FILMS CHALCOGENIDE GLASSES AC CONDUCTION Effect of proton irradiation on electrical properties of a-As2S3 Article 10.1016/j.jnoncrysol.2010.11.076 1 JOURNAL OF NON-CRYSTALLINE SOLIDS, v.357, no.11-13, pp.2340 - 2343 JOURNAL OF NON-CRYSTALLINE SOLIDS 357 11-13 2340 2343 scie scopus 000292370000033 2-s2.0-79957466852 Materials Science, Ceramics Materials Science, Multidisciplinary Materials Science Article; Proceedings Paper THIN-FILMS CHALCOGENIDE GLASSES AC CONDUCTION Chalcogenide semiconductor Proton irradiation DC conductivity AC conductivity