Lee, Tae Young Chang, Joonyeon Hickey, Mark C. Koo, Hyun Cheol Kim, Hyung-jun Han, Suk Hee Moodera, Jagadeesh S. 2024-01-20T17:02:27Z 2024-01-20T17:02:27Z 2021-09-05 2011-05-16 0003-6951 https://pubs.kist.re.kr/handle/201004/130342 We have investigated the quantum well thickness dependence of spin-orbit coupling in InAs/InGaAs heterostructures. The beat patterns of the oscillatory magnetoresistance were measured to determine the magnitude of the parameter of an inverted type InAs quantum well structures with the thicknesses ranging from 2 to 7 nm. The band energies, electronic charge distribution, and Rashba spin-orbit coupling parameter of the structure were calculated using a self-consistent field method and a k . P perturbation scheme. The magnitude of the parameter increases with decreasing the InAs quantum well thickness. Comparison with the calculated data revealed that the increase in the spin-orbit interaction parameter is due to the stronger penetration of the wave function envelope into the barriers where more pronounced band bending and barrier asymmetry occur in both the conduction and valence bands. (C) 2011 American Institute of Physics. [doi:10.1063/1.3589812] English AMER INST PHYSICS IN0.53GA0.47AS/IN0.52AL0.48AS HETEROSTRUCTURE 2-DIMENSIONAL ELECTRON GATE CONTROL NONPARABOLICITY SEMICONDUCTOR PRECESSION STATES LAYERS Quantum well thickness dependence of Rashba spin-orbit coupling in the InAs/InGaAs heterostructure Article 10.1063/1.3589812 1 APPLIED PHYSICS LETTERS, v.98, no.20 APPLIED PHYSICS LETTERS 98 20 scie scopus 000290812100042 2-s2.0-79957571322 Physics, Applied Physics Article IN0.53GA0.47AS/IN0.52AL0.48AS HETEROSTRUCTURE 2-DIMENSIONAL ELECTRON GATE CONTROL NONPARABOLICITY SEMICONDUCTOR PRECESSION STATES LAYERS Rashba spin orbit coupling InAs/InGaAs quantum well shubnikov-de Hass oscillation Kp perturbation