Lee, Jun-Young Kim, Jeong-Eun Hwang, Jin-Ha Ahn, Jae-Pyoung Lee, Byung Kook Kim, Seok-Hwan Chung, Taek-Mo Lee, Sun Sook Kim, Chang Gyoun An, Ki-Seok 2024-01-20T17:03:30Z 2024-01-20T17:03:30Z 2021-09-02 2011-05 1099-0062 https://pubs.kist.re.kr/handle/201004/130394 Nano-floating gate memory devices were fabricated by using nickel nanocrystals as a charge-trapping portion embedded into Al2O3 thin films. Ni nanocrystals were prepared via a thermal reduction of nanoscale NiO layers deposited by atomic layer deposition. Although the continuous deposition of insulating Al2O3 and semiconducting NiO thin films allowed the facile fabrication of charge-trap, the corresponding retention feature suffers from inferior charge trapping/detrapping. On the other hand, the Ni nanocrystals enhanced the retention behavior and exhibited the largest memory window of 13.8 V with the stored charge density of 2.5 x 10(13) traps/cm(2), probably due to the isolated formation of charge-trapping centers. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3583534] All rights reserved. English ELECTROCHEMICAL SOC INC NANOCRYSTALS DEVICES AL2O3 RETENTION FILMS HFO2 Comparison of Nonvolatile Memory Effects in Ni-Based Layered and Dotted Nanostructures Prepared through Atomic Layer Deposition Article 10.1149/1.3583534 1 ELECTROCHEMICAL AND SOLID STATE LETTERS, v.14, no.7, pp.J41 - J44 ELECTROCHEMICAL AND SOLID STATE LETTERS 14 7 J41 J44 scie scopus 000290276400029 2-s2.0-79959555060 Electrochemistry Materials Science, Multidisciplinary Electrochemistry Materials Science Article NANOCRYSTALS DEVICES AL2O3 RETENTION FILMS HFO2