Eom, Jonghwa Koo, Hyun Cheol Chang, Joonyeon Han, Suk Hee 2024-01-20T17:03:42Z 2024-01-20T17:03:42Z 2021-09-02 2011-05 1567-1739 https://pubs.kist.re.kr/handle/201004/130404 Spin transport in the two-dimensional electron gas with strong spin-orbit interaction is examined by using a simple phenomenological simulation. The large spin-orbit interaction and the randomized electron trajectory due to the impurity scattering make the nonlocal voltage of a spin field effect transistor undetectable in the diffusive regime. However, the spin-precessional phase accumulates coherently in the ballistic regime and the nonlocal voltage is given by a function of spin-orbit interaction parameter. If the distance between injector and detector is comparable to the mean free path, a sinusoidal oscillation of nonlocal voltage is restored even for a wide channel. (C) 2010 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE BV ELECTRONIC MEASUREMENT ELECTRICAL DETECTION PRECESSION INJECTION TRANSPORT METALS Nonlocal voltage in a spin field effect transistor with finite channel width Article 10.1016/j.cap.2010.07.019 1 CURRENT APPLIED PHYSICS, v.11, no.3, pp.276 - 279 CURRENT APPLIED PHYSICS 11 3 276 279 scie scopus kci ART001553093 000288183300003 2-s2.0-79951682755 Materials Science, Multidisciplinary Physics, Applied Materials Science Physics Article ELECTRONIC MEASUREMENT ELECTRICAL DETECTION PRECESSION INJECTION TRANSPORT METALS Spin field effect transistor Spin-orbit interaction Rashba spin splitting