Joo, Sungjung Lee, Jinseo Kim, Taeyueb Rhie, Kungwon Hong, Jinki Shin, Kyung-Ho Kim, Ki Hyun 2024-01-20T17:04:16Z 2024-01-20T17:04:16Z 2021-09-02 2011-05 1567-1739 https://pubs.kist.re.kr/handle/201004/130433 The spin polarization of a high g-factor bulk semiconductor is theoretically investigated in the presence of a magnetic field parallel to a driving electric field. Calculations have been carried out using the energydependent relaxation time approximation in association with spin-flip scattering. As the magnitude of the magnetic field increases, the spin-polarized current alternates between the spin-up and spin-down states for the low spin-scattering system. This implies that the current polarization can be tuned by controlling the magnetic field strength, suggesting possible applications to spintronic devices. An experimental method for investigating alternative current polarization is also considered. @ 2010 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE BV HGTE QUANTUM-WELLS RESONANT SCATTERING MAGNETORESISTANCE GERMANIUM Tunable polarization of spin polarized current by magnetic field Article 10.1016/j.cap.2010.09.018 1 CURRENT APPLIED PHYSICS, v.11, no.3, pp.568 - 572 CURRENT APPLIED PHYSICS 11 3 568 572 scie scopus kci ART001553422 000288183300057 2-s2.0-79951676943 Materials Science, Multidisciplinary Physics, Applied Materials Science Physics Article HGTE QUANTUM-WELLS RESONANT SCATTERING MAGNETORESISTANCE GERMANIUM Spin polarization Spin-flip g-factor Zeeman HgCdTe