Kumar, P. Wade, A. Smith, L. M. Jackson, H. E. Yarrison-Rice, J. M. Choi, Y. -J. Park, J. -G. 2024-01-20T17:04:40Z 2024-01-20T17:04:40Z 2021-09-02 2011-04-04 0003-6951 https://pubs.kist.re.kr/handle/201004/130451 Photocurrent spectroscopy has been carried out on single CdS nanosheet devices in the metal-semiconductor-metal configuration with both Schottky and Ohmic contacts. Spatial imaging of the photocurrent shows that the photosensitive regions are localized at the reverse biased contact for Schottky type contacts and uniformly distributed throughout the nanosheet for Ohmic contacts. Photocurrent spectra show excitonic resonances at low temperatures corresponding to the A, B, C hole bands. Subband gap pulsed laser excitation reveals two-photon absorption dominated photocurrents consistent with a nonlinear coefficient of beta = 2 cm/GW for these nanosheet devices. (C) 2011 American Institute of Physics. [doi:10.1063/1.3573859] English AMER INST PHYSICS NANOWIRES PHOTOLUMINESCENCE TEMPERATURE EVAPORATION DEPOSITION GROWTH ZNS Photocurrent spectroscopy of single CdS nanosheets: Valence band structure and two photon absorption Article 10.1063/1.3573859 1 APPLIED PHYSICS LETTERS, v.98, no.14 APPLIED PHYSICS LETTERS 98 14 scie scopus 000289297800063 2-s2.0-79954532062 Physics, Applied Physics Article NANOWIRES PHOTOLUMINESCENCE TEMPERATURE EVAPORATION DEPOSITION GROWTH ZNS Cadmium compounds II-VI semiconductors nanostructured materials ohmic contacts photoconductivity Schottky barriers two-photon spectra valence bands