Jang, Doyoung Lee, Jae Woo Lee, Chi-Woo Colinge, Jean-Pierre Montes, Laurent Lee, Jung Il Kim, Gyu Tae Ghibaudo, Gerard 2024-01-20T17:30:44Z 2024-01-20T17:30:44Z 2021-09-02 2011-03-28 0003-6951 https://pubs.kist.re.kr/handle/201004/130508 Low-frequency noise in n-type junctionless multigate transistors was investigated. It can be well understood with the carrier number fluctuations whereas the conduction is mainly limited by the bulk expecting Hooge mobility fluctuations. The trapping/release of charge carriers is related not only to the oxide-semiconductor interface but also to the depleted channel. The volume trap density is in the range of 6-30 x 10(16) cm(-3) eV(-1), which is similar to Si-SiO2 bulk transistors and remarkably lower than in high-k transistors. These results show that the noise in nanowire devices might be affected by additional trapping centers. (C) 2011 American Institute of Physics. [doi:10.1063/1.3569724] English AMER INST PHYSICS FIELD-EFFECT TRANSISTORS EXCESS NOISE MOS-TRANSISTORS 1/F NOISE DEVICES MODEL Low-frequency noise in junctionless multigate transistors Article 10.1063/1.3569724 1 APPLIED PHYSICS LETTERS, v.98, no.13 APPLIED PHYSICS LETTERS 98 13 scie scopus 000289153600091 2-s2.0-79953752216 Physics, Applied Physics Article FIELD-EFFECT TRANSISTORS EXCESS NOISE MOS-TRANSISTORS 1/F NOISE DEVICES MODEL