Park, Y. J. Hickey, M. C. Van Veenhuizen, M. J. Chang, J. Heiman, D. Perry, C. H. Moodera, J. S. 2024-01-20T17:30:47Z 2024-01-20T17:30:47Z 2021-09-02 2011-03-23 0953-8984 https://pubs.kist.re.kr/handle/201004/130511 The efficiency of spin polarized charge transfer was investigated in an Fe/MgO tunnel barrier/GaAs based structure using spin dependent photocurrent measurements, whereby a spin imbalance in carrier population was generated in the GaAs by circularly polarized light. The dominance of tunneling transport processes over Schottky emission gave rise to a high spin transfer efficiency of 35% under the photovoltaic mode of device operation. A spin dependent tunneling conductance associated with spin polarized electron transport was identified by the observation of phase changes. This transport prevails over the unpolarized electron and hole conduction over the bias range which corresponds to flat band conditions. English IOP PUBLISHING LTD TUNNEL-JUNCTIONS TRANSPORT SEMICONDUCTOR INJECTION BARRIER METAL Efficient spin transfer phenomena in Fe/MgO/GaAs structure Article 10.1088/0953-8984/23/11/116002 1 JOURNAL OF PHYSICS-CONDENSED MATTER, v.23, no.11 JOURNAL OF PHYSICS-CONDENSED MATTER 23 11 scie scopus 000287969200023 2-s2.0-79952659924 Physics, Condensed Matter Physics Article TUNNEL-JUNCTIONS TRANSPORT SEMICONDUCTOR INJECTION BARRIER METAL spin transfer Fe/MgO/GaAs spin dependent photo current tunneling barrier