Lee, Sang Yeol Kim, Do Hyung Chong, Eugene Jeon, Yong Woo Kim, Dae Hwan 2024-01-20T17:30:52Z 2024-01-20T17:30:52Z 2021-09-02 2011-03-21 0003-6951 https://pubs.kist.re.kr/handle/201004/130515 We report on the origin of threshold voltage shift with the thickness of amorphous InGaZnO channel layer deposited by rf magnetron sputter at room temperature, using density of states extracted from multi frequency method and falling rates of activation energy, which of trends are entirely consistent each other in respect of the reduction of total traps with increasing the channel thickness. Furthermore, we shows that the behavior of Delta V-th under the positive gate bias stress and thermal stress can be explained by charge trapping mechanism based on total trap variation. (C) 2011 American Institute of Physics. [doi:10.1063/1.3570641] English AMER INST PHYSICS Effect of channel thickness on density of states in amorphous InGaZnO thin film transistor Article 10.1063/1.3570641 1 APPLIED PHYSICS LETTERS, v.98, no.12 APPLIED PHYSICS LETTERS 98 12 scie scopus 000288808200042 2-s2.0-79953844973 Physics, Applied Physics Article amorphous oxide semiconductor threshold voltage densito of state a-IGZO