Yuk, J. M. Lee, J. Y. Lee, Zonghoon No, Y. S. Kim, T. W. Kim, J. Y. Choi, W. K. 2024-01-20T17:31:16Z 2024-01-20T17:31:16Z 2021-09-02 2011-03-15 0169-4332 https://pubs.kist.re.kr/handle/201004/130535 ZnO thin films were deposited on n-Si substrates by using plasma-assisted molecular beam epitaxy. Plane-view zero-loss energy filtered transmission electron microscopy (TEM) images showed that the grain boundaries between large and small grains changed from the curve to the straight shape during ZnO grain growth. The [0 0 0 1]-tilt grain boundary of as-grown ZnO thin films changed from the zigzag facet planes into the symmetric tilt grain boundary through the asymmetric tilt grain boundary with periodic {0 1 (1) over bar 0}/{3 5 (8) over bar 0} flat planes. Such an atomic structural variation of grain boundary changes from curved grain boundaries to flat shape was due to decrease of total boundary energy during grain growth. The atomic structural variations of the [0 0 0 1]-tilt grain boundaries during ZnO grain growth occurred by thermal treatments are described on the basis of the TEM images. (c) 2011 Elsevier B.V. All rights reserved. English ELSEVIER ZINC-OXIDE THIN-FILM ELECTRONIC-PROPERTIES TEMPERATURE LASERS Atomic structural variations of [0 0 0 1]-tilt grain boundaries during ZnO grain growth occurred by thermal treatments Article 10.1016/j.apsusc.2010.12.083 1 APPLIED SURFACE SCIENCE, v.257, no.11, pp.4817 - 4820 APPLIED SURFACE SCIENCE 257 11 4817 4820 scie scopus 000287993900010 2-s2.0-79951672953 Chemistry, Physical Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Chemistry Materials Science Physics Article ZINC-OXIDE THIN-FILM ELECTRONIC-PROPERTIES TEMPERATURE LASERS ZnO Si Atomic structure Grain boundary