Kim, Kyoungwon Debnath, Pulak Chandra Kim, Sangsig Lee, Sang Yeol 2024-01-20T17:31:20Z 2024-01-20T17:31:20Z 2022-01-10 2011-03-14 0003-6951 https://pubs.kist.re.kr/handle/201004/130538 We have investigated the effect of the temperature dependency on the device stability of pristine ZnO nanowires (NWs) field effect transistor (FET). Pristine ZnO NW FET shows a large threshold voltage (V(th)) shift by 6.5 V after increasing the measured temperature from 323 to 363 K. This large shift in V(th) is mainly due to thermally activated process. Thermally activated electrons from the deep level trap site can be free carriers which results in the shift in V(th) in negative direction. Also, activation energy of ZnO NW FET is derived to be about 1.432 eV based on thermally activated Arrhenius model. (C) 2011 American Institute of Physics. [doi:10.1063/1.3567795] English AMER INST PHYSICS FABRICATION Temperature stress on pristine ZnO nanowire field effect transistor Article 10.1063/1.3567795 1 APPLIED PHYSICS LETTERS, v.98, no.11 APPLIED PHYSICS LETTERS 98 11 scie scopus 000288569300054 2-s2.0-79952919306 Physics, Applied Physics Article FABRICATION deep levels field effect transistors II-VI semiconductors nanowires zinc compounds