Kim, Yong Tae Kim, Eun Tae Kim, Chung Soo Lee, Jeong Yong 2024-01-20T17:32:09Z 2024-01-20T17:32:09Z 2021-09-02 2011-03 1862-6254 https://pubs.kist.re.kr/handle/201004/130579 The boundary reaction between InSb and InTe bilayers shows that In3Sb1Te2 (IST) is formed at the InTe side first due to the diffusion of Sb atoms from InSb to InTe rather than the diffusion of Te atoms from InTe to InSb at the crystallization temperature of IST. The diffusion of Sb atoms into InTe changes the atomic configuration of InTe, which leads to small lattice distortion and a coherent boundary region for the formation of IST crystalline thin films. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim English WILEY-V C H VERLAG GMBH CHANGE MEMORY MULTIBIT STORAGE FILM Phase transformation mechanism of In-Sb-Te through the boundary reaction between InSb and InTe Article 10.1002/pssr.201004515 1 PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, v.5, no.3, pp.98 - 100 PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS 5 3 98 100 scie scopus 000288178800004 2-s2.0-79952221669 Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Materials Science Physics Article CHANGE MEMORY MULTIBIT STORAGE FILM phase change materials InSbTe phase transitions transmission electron microscopy TEM