Park, Ji-Ho Wakahara, Akihiro Okada, Hiroshi Sekiguchi, Hiroto Tiwari, Ajay Kim, Yong-Tae Song, Jonghan Lee, Jong-Han Jhin, Junggeun 2024-01-20T17:32:15Z 2024-01-20T17:32:15Z 2021-09-02 2011-03 0021-4922 https://pubs.kist.re.kr/handle/201004/130584 The growth mode of europium (Eu)-doped GaN epitaxial films grown on a GaN template by rf plasma- assisted molecular beam epitaxy (PAMBE) was investigated with different III/ V ratios under a constant Eu beam equivalent pressure ratio [P-Eu/P-Eu + P-Ga)]. The reflection high-energy electron diffraction (RHEED) patterns and atomic force microscopy (AFM) images revealed the transition of the growth mode from threedimensional (3D) to step-flow/two-dimensional (2D) by increasing the III/V ratio. When the films were grown in the 3D growth mode, Eu concentrations estimated by Rutherford backscattering spectrometry/channeling (RBS/channeling) were almost constant, although the III/V ratios varied. However, when the growth mode was transferred from 3D to step-flow/2D, precipitates on the surface abruptly increased while the Eu concentration abruptly decreased, indicating the abrupt degradation of Eu-incorporation in the film. Luminescence sites of Eu3_ were sensitive to the III/V ratio, and Eu atoms have different luminescence sites in both growth modes. Furthermore, luminescence efficiency abruptly increased when the growth mode was transferred from 3D to step-flow/2D. (C) 2011 The Japan Society of Applied Physics English IOP PUBLISHING LTD LIGHT-EMITTING-DIODES IMPLANTED GAN III-NITRIDES PHOTOLUMINESCENCE ALXGA1-XN ER EMISSION SURFACE GREEN Effect of Growth Mode on Eu-Incorporation and Luminescence of Eu-Doped GaN Epitaxial Film Grown by Plasma-Assisted Molecular Beam Epitaxy Article 10.1143/JJAP.50.031003 1 JAPANESE JOURNAL OF APPLIED PHYSICS, v.50, no.3 JAPANESE JOURNAL OF APPLIED PHYSICS 50 3 scie scopus 000288649800014 2-s2.0-79953090337 Physics, Applied Physics Article LIGHT-EMITTING-DIODES IMPLANTED GAN III-NITRIDES PHOTOLUMINESCENCE ALXGA1-XN ER EMISSION SURFACE GREEN PAMBE Eu-doped GaN Luminescence BEP