Jeong, Doo Seok Park, Goon-Ho Lim, Hyungkwang Hwang, Cheol Seong Lee, Suyoun Cheong, Byung-ki 2024-01-20T17:32:30Z 2024-01-20T17:32:30Z 2021-09-02 2011-03 0947-8396 https://pubs.kist.re.kr/handle/201004/130597 The dc electric conduction behavior of amorphous GeSe films sandwiched between the Pt bottom electrode and various counter electrodes (Pt, Cr, and Ti) was examined in a voltage as well as a time domain. The time domain investigation identified time-dependent resistance change and relaxation. The voltage domain analysis revealed that the current transport in these metal-insulator-metal junctions is probably attributed to bulk-limited band-conduction due to delocalized charge carriers. English SPRINGER HEIDELBERG LEAKAGE CURRENTS AC CONDUCTION CHALCOGENIDE DEPENDENCE TEMPERATURE MODEL Dc current transport behavior in amorphous GeSe films Article 10.1007/s00339-011-6283-6 1 APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, v.102, no.4, pp.1027 - 1032 APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 102 4 1027 1032 scie scopus 000288253600035 2-s2.0-79959342890 Materials Science, Multidisciplinary Physics, Applied Materials Science Physics Article LEAKAGE CURRENTS AC CONDUCTION CHALCOGENIDE DEPENDENCE TEMPERATURE MODEL chalcogenide dc conductivity