Jeong, Doo Seok Thomas, Reji Katiyar, R. S. Scott, J. F. 2024-01-20T17:32:31Z 2024-01-20T17:32:31Z 2021-09-02 2011-03 1058-4587 https://pubs.kist.re.kr/handle/201004/130598 The resistance switching behavior of several oxide thin-film materials recently attracted great interest in semiconductor memory devices as a nonvolatile memory element, popularly described as Resistive Random Access Memory (RRAM). This switching in various transition metal oxides and ferroelectric/multiferroic oxides could form the basis for next-generation non-volatile memory, when the current semiconductor memory technology reaches its limit in terms of the density. The basic focus of this review is to examine resistive switching and mechanisms for such behavior in TiO2; the system initially attracted attention globally and has been widely studied. The present paper gives an overview on the suggested mechanism for the resistive switching in TiO2 solid electrolytes and addresses the current understanding of this system. The review ends with some open questions about the mechanism and current status of TiO2 as a candidate for RRAM in terms of stability and scalability. English TAYLOR & FRANCIS LTD Overview on the Resistive Switching in TiO2 Solid Electrolyte Article 10.1080/10584587.2011.573726 1 INTEGRATED FERROELECTRICS, v.124, pp.87 - 96 INTEGRATED FERROELECTRICS 124 87 96 N scie scopus 000297007500013 2-s2.0-79961186125 Engineering, Electrical & Electronic Physics, Applied Physics, Condensed Matter Engineering Physics Article; Proceedings Paper LEAD-ZIRCONATE-TITANATE THIN-FILMS RESISTANCE MEMORY OXIDE Resistive switching TiO2 electroforming RRAM