Kim, Yong In Kim, Eun Tae Lee, Jeong Yong Kim, Yong Tae 2024-01-20T17:33:05Z 2024-01-20T17:33:05Z 2021-09-02 2011-02-28 0003-6951 https://pubs.kist.re.kr/handle/201004/130625 The origin of multilevel resistances of In3Sb1Te2 (IST) phase-change random access memory cell has been investigated with high-resolution transmission electron microscopy (HR-TEM). The HR-TEM indicates that the microstructure of IST in the programming volume changes from amorphous to InSb and amorphous at the first state, and InSb and InTe at the second state, and IST at the third state, which are fairly consistent with four different levels of resistance. The resistance difference between the amorphous and the IST is about four orders of magnitude. (C) 2011 American Institute of Physics. [doi:10.1063/1.3562024] English AMER INST PHYSICS DATA-STORAGE FILMS ALLOY Microstructures corresponding to multilevel resistances of In3Sb1Te2 phase-change memory Article 10.1063/1.3562024 1 APPLIED PHYSICS LETTERS, v.98, no.9 APPLIED PHYSICS LETTERS 98 9 scie scopus 000288026700027 2-s2.0-79952417606 Physics, Applied Physics Article DATA-STORAGE FILMS ALLOY InSbTe phase-change memory HRTEM