Koo, Hyun Cheol Kwon, Jae Hyun Eom, Jonghwa Chang, Joonyeon Han, Suk Hee Johnson, Mark 2024-01-20T17:33:18Z 2024-01-20T17:33:18Z 2021-09-02 2011-02-16 0022-3727 https://pubs.kist.re.kr/handle/201004/130635 Gate control of spin precession is experimentally presented in an InAs quantum well with ferromagnetic spin injector and detector. The gate electric field modulates the spin-orbit interaction and spin precession. As a consequence, spin dependent conductance in the InAs channel is controlled by the gate voltage. Using ballistic spin transport theory, gate modulation results are proved to fit very well with gate voltage dependence of Rashba field strength. English IOP PUBLISHING LTD NONCENTROSYMMETRIC SEMICONDUCTORS ORBIT INTERACTION INJECTION HETEROSTRUCTURE RELAXATION TRANSPORT ELECTRONS CHARGE METAL Gate modulation of spin precession in a semiconductor channel Article 10.1088/0022-3727/44/6/064006 1 JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.44, no.6 JOURNAL OF PHYSICS D-APPLIED PHYSICS 44 6 scie scopus 000286659800007 2-s2.0-79551704633 Physics, Applied Physics Article; Proceedings Paper NONCENTROSYMMETRIC SEMICONDUCTORS ORBIT INTERACTION INJECTION HETEROSTRUCTURE RELAXATION TRANSPORT ELECTRONS CHARGE METAL gate modulation spin precession semiconductor channel