Son, Dong Ick Park, Dong Hee Kim, Jong Bin Choi, Ji-Won Kim, Tae Whan Angadi, Basavaraj Yi, Yeonjin Choi, Won Kook 2024-01-20T17:33:31Z 2024-01-20T17:33:31Z 2021-09-01 2011-02-10 1932-7447 https://pubs.kist.re.kr/handle/201004/130646 We report on the nonvolatile memory characteristics of a bistable organic memory (BOM) device with Au nanopartides (NPs) embedded in a conducting poly(N-vinylcarbazole) (PVK) colloids hybrid layer deposited on flexible poly(ethylenete-rephthalate) (PET) substrates. Transmission electron microscopy (TEM) images show the Au nanoparticles distributed isotropically around the surface of a PVK colloid. The average induced charge on Au nanoparticles, estimated using the C-V hysteresis curve, was large, as much as 5 holes/NP at a sweeping voltage of +/-3 V. The maximum ON/OFF ratio of the current bistability in the BOM devices was as large as 1 x 10(5). The cycling endurance tests of the ON/OFF switching exhibited a high endurance of above 1.5 x 10(5) cycles, and a high ON/OFF ratio of similar to 10(5) could be achieved consistently even after quite a long retention time of more than 1 x 10(6) s. To clarify the memory mechanism of the hole-mediated bistable organic memory device, the interactions between Au nanoparticles and poly(N-vinylcarbazole) colloids was studied by estimating the density of states and projected density of state calculations using density functional theory. Au atom interactions with a PVK unit decreased the band gap by 2.96 eV with the new induced gap states at 5.11 eV (HOMO, E-0) and LUMO 4.30 eV and relaxed the HOMO level by 0.5 eV (E-1). E-1 at similar to 6.2 eV is very close to the pristine HOMO, and thus the trapped hole in E-1 could move to the HOMO of pristine PVK From the experimental data and theoretical calculation, it was revealed that a low-conductivity state resulted from a hole trapping at E-o and E-1 states and subsequent hole transportation through Fowler-Nordheim tunneling from E-1 state to Au NPs and/or interface trap states leads to a high conductivity state. English American Chemical Society ELECTRONIC-STRUCTURE THIN-FILM DENSITY MECHANISM BISTABILITY INTERFACES Bistable Organic Memory Device with Gold Nanoparticles Embedded in a Conducting Poly(N-vinylcarbazole) Colloids Hybrid Article 10.1021/jp110030x 1 The Journal of Physical Chemistry C, v.115, no.5, pp.2341 - 2348 The Journal of Physical Chemistry C 115 5 2341 2348 scie scopus 000286868600119 2-s2.0-79952650997 Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Chemistry Science & Technology - Other Topics Materials Science Article ELECTRONIC-STRUCTURE THIN-FILM DENSITY MECHANISM BISTABILITY INTERFACES Bistable organic memory Au nanoparticle Poly(N-vinylcarbazole) endurance cycling stress test