Shin, J. W. Lee, J. Y. No, Y. S. Kim, T. W. Choi, W. K. 2024-01-20T17:33:43Z 2024-01-20T17:33:43Z 2022-01-25 2011-02 0925-8388 https://pubs.kist.re.kr/handle/201004/130655 ZnO nanocrystals embedded in an amorphous Zn2xSi1-xO2 layer inserted between a ZnO thin film and a p-Si (100) substrate were formed by magnetron sputtering and thermal annealing. High-resolution transmission electron microscopy (HRTEM) images showed that ZnO nanocrystals were embedded in the Zn2xSi1-xO2 layer inserted into a ZnO/Si heterostructure. The {01 (1) over bar0} planes were observed for the ZnO nanocrystals with a [0001] orientation direction, and the {01 (1) over bar1} and the {0001} planes were observed for the ZnO nanocrystal with a [2 (1) over bar(1) over bar0] orientation direction. The formation of ZnO nanocrystals consisting of the most stable {0001} and (01 (1) over bar1) facet planes was attributed to atomic rearrangement of Zn and 0 atoms to reduce the surface energy during the thermal annealing and the cooling processes. The formation mechanisms for the ZnO nanocrystals embedded in an amorphous Zn2xSi1-xO2 layer inserted into a ZnO/p-Si (100) heterostructure were described on the basis of the HRTEM images. (C)2010 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE SA Formation mechanisms of ZnO nanocrystals embedded in an amorphous Zn2xSi1-xO2 layer due to sputtering and annealing Article 10.1016/j.jallcom.2010.12.021 1 JOURNAL OF ALLOYS AND COMPOUNDS, v.509, no.6, pp.3132 - 3135 JOURNAL OF ALLOYS AND COMPOUNDS 509 6 3132 3135 N scie scopus 000287058100093 2-s2.0-78651376693 Chemistry, Physical Materials Science, Multidisciplinary Metallurgy & Metallurgical Engineering Chemistry Materials Science Metallurgy & Metallurgical Engineering Article LIGHT-EMITTING DEVICES SOLAR-CELLS NANOPARTICLES FABRICATION Oxide materials Semiconductors Surfaces and interfaces Thin films Atomic scale structure Transmission electron microscopy TEM