Chong, Eugene Chun, Yoon Soo Lee, Sang Yeol 2024-01-20T17:34:01Z 2024-01-20T17:34:01Z 2021-09-02 2011-02 1099-0062 https://pubs.kist.re.kr/handle/201004/130670 We fabricated high-performance thin-film transistors (TFTs) with a silicon-indium-zinc-oxide (SIZO ) channel layer deposited by radio frequency sputtering at room temperature. The SIZO-TFTs passivated with poly (methyl methacrylate) showed a field effect mobility of 8 cm(2)/V . s and a subthreshold swing of 90 mV/decade even with a process temperature below 150 degrees C. Si acted as a stabilizer and carrier suppressor in the In-Zn-O system. In addition, the temperature and bias-induced stability of SIZO-TFTs along with oxygen effects are experimentally studied. (C) 2010 The Electrochemical Society. (DOI: 10.1149/1.3518518) All rights reserved. English ELECTROCHEMICAL SOC INC INSTABILITY Effect of Trap Density on the Stability of SiInZnO Thin-Film Transistor under Temperature and Bias-Induced Stress Article 10.1149/1.3518518 1 ELECTROCHEMICAL AND SOLID STATE LETTERS, v.14, no.2, pp.H96 - H98 ELECTROCHEMICAL AND SOLID STATE LETTERS 14 2 H96 H98 scie scopus 000285158800028 2-s2.0-78951494012 Electrochemistry Materials Science, Multidisciplinary Electrochemistry Materials Science Article INSTABILITY thermal instability SiInZnO trap density