Kwon, Soon Mook Kang, Gil Bum Kim, Yong Tae Kim, Young-Hwan Ju, Byeong-Kwon 2024-01-20T17:34:10Z 2024-01-20T17:34:10Z 2021-09-02 2011-02 1533-4880 https://pubs.kist.re.kr/handle/201004/130678 Label-free, sensitive, and real-time c-reactive protein (CRP) sensor was fabricated using p-type silicon nanowire (SiNW) based structures configured as field effect transistors (FET) using the conventional 'top-down' semiconductor processes. The width of SiNWs were distributed 80 nm to 400 nm. Among them to improve signal-to-noise ratio and sensitivity of SiNW FET, 221 nm-SiNW was chosen for biosensing of CRP. Antibody of c-reactive protein (anti-CRP) was immobilized on the SiNW surface through polydimethylsiloxane (PDMS) microfluidic channel for detection of CRP. Specific binding of CRP with anti-CRP on the SiNW surface caused a conductance change of SiNW FET and various injections from 10 and 1 mu g/ml to 100 ng/ml solutions of CRP resulted in the conductance changes from 39 and 25 to 16%, respectively. Label-free, in-situ and very sensitive electrical detection of CRP was demonstrated with the prepared SiNW FET. English AMER SCIENTIFIC PUBLISHERS SENSOR ARRAYS LABEL-FREE ELECTRICAL DETECTION In-Situ Detection of C-Reactive Protein Using Silicon Nanowire Field Effect Transistor Article 10.1166/jnn.2011.3417 1 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.11, no.2, pp.1511 - 1514 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 11 2 1511 1514 scie scopus 000287167900107 2-s2.0-79954987510 Chemistry, Multidisciplinary Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Chemistry Science & Technology - Other Topics Materials Science Physics Article; Proceedings Paper SENSOR ARRAYS LABEL-FREE ELECTRICAL DETECTION Silicon Nanowire Field Effect Transistor Top-Down Biosensor C-Reactive Protein Label-Free Real-Time