Lee, Jeong Hoon Hwang, Kyo Seon Kim, Tae Song 2024-01-20T17:34:35Z 2024-01-20T17:34:35Z 2021-09-02 2011-02 1931-7573 https://pubs.kist.re.kr/handle/201004/130699 In this study, flat piezoelectric microcantilevers were fabricated under low-stress Pb(Zr(0.52)Ti(0.48))O(3) (PZT) film conditions. They were analyzed using the Raman spectrum and wafer curvature methods. Based on the residual stress analysis, we found that a thickness of 1 mu m was critical, since stress relaxation starts to occur at greater thicknesses, due to surface roughening. The (111) preferred orientation started to decrease when the film thickness was greater than 1 mu m. The d(33) value was closely related to the stress relaxation associated with the preferred orientation changes. We examined the harmonic response at different PZT cantilever lengths and obtained a 9.4-mu m tip displacement at 3 V(p-p) at 1 kHz. These analyses can provide a platform for the reliable operation of piezoelectric microdevices, potentially nanodevice when one needs to have simultaneous control of the residual stress and the piezoelectric properties. English SPRINGER PB(ZR0.53TI0.47)O-3 THIN-FILMS PZT SUBSTRATE THICKNESS MODE The Microscopic Origin of Residual Stress for Flat Self-Actuating Piezoelectric Cantilevers Article 10.1007/s11671-010-9810-z 1 NANOSCALE RESEARCH LETTERS, v.6 NANOSCALE RESEARCH LETTERS 6 scie scopus 000289104200055 2-s2.0-79952709420 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Science & Technology - Other Topics Materials Science Physics Article PB(ZR0.53TI0.47)O-3 THIN-FILMS PZT SUBSTRATE THICKNESS MODE Biosensor Cantilever Nanomechanics Piezoelectric Residual stress