Abdellatif, M. H. Kopylov, O. S. Song, Jin Dong Choi, Won Jun Cho, Nam Ki Lee, Jungil 2024-01-20T18:00:55Z 2024-01-20T18:00:55Z 2021-09-05 2011-01 1533-4880 https://pubs.kist.re.kr/handle/201004/130755 The carrier thermodynamics of In As self assembled quantum dot (QD) are investigated. The investigated parameters include the dependence of quantum dot photoluminescence on temperature and the photoluminescence (PL) dependence on the excitation power density. Results are discussed on the basis of steady state model. The model predicts that the photoluminescence integrated intensity has linear dependence on the excitation power density in low temperature range, and super linear in the high temperature range. Our data matches the prediction of the steady state model. In our sample the super linearity starts to take place at T = 150 K and the super linear behavior of the photoluminescence on excitation power density proves that the carrier dynamics in our quantum dot sample are dominated by uncorrelated electron hole pair in the high temperature region. English AMER SCIENTIFIC PUBLISHERS LIGHT-EMISSION MU-M LAYER Applicability of Steady State Model to Carrier Thermodynamics in In As Quantum Dot Article 10.1166/jnn.2011.3238 1 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.11, no.1, pp.606 - 609 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 11 1 606 609 scie scopus 000286344400107 2-s2.0-84863011227 Chemistry, Multidisciplinary Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Chemistry Science & Technology - Other Topics Materials Science Physics Article LIGHT-EMISSION MU-M LAYER Carrier Thermodynamics Photoluminescence In As Quantum Dot Steady State Model