Chong, Eugene Jeon, Yong Woo Chun, Yoon Soo Kim, Dae Hwan Lee, Sang Yeol 2024-01-20T18:01:52Z 2024-01-20T18:01:52Z 2021-09-02 2011-01 0741-3106 https://pubs.kist.re.kr/handle/201004/130802 The top-source noncoplanar diagonal electrode (TS-NDE) structure was fabricated and simulated with the oxide channel layer. The structure exhibits enhanced stability and low subthreshold swing with higher mobility than those of bottom-source electrode structure thin-film transistors (TFTs). Interestingly, in this highly stable TS-NDE, the current density was highly formed through the center of the active-channel region from top-source electrode to bottom-drain electrode in the thin-film layer due to the on-current state. In other words, the TS-NDE TFT is less affected by back-interface interferences, which are the main degradation factors in oxide TFTs due to the different current path. English IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC BOTTOM-CONTACT Design of Noncoplanar Diagonal Electrode Structure for Oxide Thin-Film Transistor Article 10.1109/LED.2010.2089038 1 IEEE ELECTRON DEVICE LETTERS, v.32, no.1, pp.39 - 41 IEEE ELECTRON DEVICE LETTERS 32 1 39 41 scie scopus 000285844400013 2-s2.0-78650912351 Engineering, Electrical & Electronic Engineering Article BOTTOM-CONTACT Electronic mechanisms semiconductors thin-film transistors (TFTs)