Chong, Eugene Kim, Seung Han Lee, Sang Yeol 2024-01-20T18:02:15Z 2024-01-20T18:02:15Z 2021-09-04 2010-12-20 0003-6951 https://pubs.kist.re.kr/handle/201004/130816 Silicon effect on the performance of amorphous silicon-indium-zinc-oxide (a-SIZO) films has been investigated for thin-film transistor applications depending on composition ratio and annealing-temperature. X-ray diffraction, x-ray photoelectron spectroscopy, and time-of-flight secondary-ion-mass-spectrometry have been used to characterize the properties of SIZO thin-film channel layer with different Si concentrations and annealing-temperatures. Those results revealed that Si is more strongly binding with oxygen since their high metal-oxygen bonding-strength and low standard electric potential, which result in implying Si, allow the amorphous oxide semiconductors to achieve oxide-lattice structures even at a low-temperature of 150 degrees C. (C) 2010 American Institute of Physics. [doi:10.1063/1.3530453] English AMER INST PHYSICS Role of silicon in silicon-indium-zinc-oxide thin-film transistor Article 10.1063/1.3530453 1 APPLIED PHYSICS LETTERS, v.97, no.25 APPLIED PHYSICS LETTERS 97 25 scie scopus 000285764300045 2-s2.0-78650723416 Physics, Applied Physics Article amorphous semiconductors annealing indium compounds