Lee, Jinseo Joo, Sungjung Kim, Taeyueb Kim, Ki Hyun Rhie, Kungwon Hong, Jinki Shin, Kyung-Ho 2024-01-20T18:02:16Z 2024-01-20T18:02:16Z 2021-09-04 2010-12-20 0003-6951 https://pubs.kist.re.kr/handle/201004/130817 An abrupt change of conductance at a threshold magnetic field was observed in a device consisting of a nonmagnetic narrow-gap semiconductor. The conductance varies more than 25 times as the magnetic field increases. The threshold magnetic field can be tuned using a bias voltage from zero to several hundred Gauss. This large magnetoconductance effect is caused by the magnetic field-dependent impact ionization process. A theoretical model is proposed, and calculations based on this model simulate the experimental results closely. This device may be a good candidate for an electrical switching device controlled by a magnetic field. (C) 2010 American Institute of Physics. [doi:10.1063/1.3532105] English AMER INST PHYSICS SILICON LOGIC An electrical switching device controlled by a magnetic field-dependent impact ionization process Article 10.1063/1.3532105 1 APPLIED PHYSICS LETTERS, v.97, no.25 APPLIED PHYSICS LETTERS 97 25 scie scopus 000285764300091 2-s2.0-78650741211 Physics, Applied Physics Article SILICON LOGIC